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          首页 > 产品中心 > 原子力显微镜 > 测量、表征和操作系统 > HEMS – Hall Effect Measurement System 霍尔效应测量系统(HEM

          产品名称:HEMS – Hall Effect Measurement System 霍尔效应测量系统(HEM

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          产品特点:北京中显恒业--专注显微光学!!!
          :王春晓

          HEMS – Hall Effect Measurement System 霍尔效应测量系统(HEMS)-王春晓

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          HEMS – Hall Effect Measurement System 霍尔效应测量系统(HEM的详细资料:

          Hall Effect Measurement System 霍尔效应测量系统(HEMS)

          一、产品简介:

          . Multisample experiments with 4--contact Van der Pauw and 6--contact Hall

           4 - 接触Van der Pauw和6 - 接触霍尔的多样本实验

          .Wide range of materials; GaAs, Inp, InAs, Si, Ge, SiGe, HgCdTe, GaN, SiC, AIN, metal oxides and organic conductors

          宽泛的材料; GaAs,Inp,InAs,Si,Ge,SiGe,HgCdTe,GaN,SiC,AlN,金属氧化物和有机导体

          . Ideally suited for materials research, product developments and quality control

          完美的材料研究,产品开发和质量保障

          .Sample resistance, resistivity, Hall coefficient, Hall mobility, carrier concentration or current-voltage characteristics

          样品电阻,电阻率,霍尔系数,霍尔迁移率,载流子浓度或电流- 电压特性

          .Windows Operating system for system operation, data acquisition and analysis.

          用于系统操作、数据采集和分析的Windows操作系统

          二、HEMS技术规格

          HEMS System provides a range of measurements on both van der Pauw and Hall bar geometries. The standard system is capable of DC field measurements and has a Low, Mid, High & Super High resistance range to cover from 1µ? to 10T?.

          HEMS系统提供van der Pauw和Hall bar geometries的一系列测量。标准系统具备进行直流电场测量的能力,并具有可覆盖1μΩ至10TΩ的低、中、高和超高电阻范围。

          Optionally AC field measurement capability, Variable Temperature accessories, Turbo pumping systems are available.

          还提供可供选择的交流电场测量功能、可变温度附件及涡轮泵系统。

          Suitable for:

          适用于:

          .GaAs-based materials (FETs MESFETs HEMTs pHEMTs HBTs),

          以砷化镓为基础的材料(FETs MESFETs HEMTs pHEMTs HBTs)

          .InP, InAs, GaN and AIN-based materials

          以磷化铟、砷化铟、硅基和氮化铝为基础的材料

          .a-Si, Si, Ge, SiC, Si, insulating materials  

          非晶硅、硅、基态锗、碳化硅,硅及绝缘材料

          .HgCdTd, ZnO, SiGe-based materials 以窄禁带半导体、氧化锌、硅锗为基础的材料

          .MnGaAs, ZnO, infrared applications (LEDs, laser diodes, detectors),

          锰砷化镓,氧化锌,红外应用(LED,激光二极管,检测器)

          .Metal oxides, 金属氧化物

          .Organic, inorganic conductors 有机、无机导体,

          .OLED structures, 有机发光半导体结构

          .High-temperature superconductors 高温超导体

          .Ferrites. 铁素体

          .Wide measurement capability: 强大的测量能力

          .Hall voltage measurement,  霍尔电压测量

          .IV Curve Measurement,     IV曲线测量

          .Resistance measurement,   电阻测量

          .Magnetoresistance measurement, 磁阻测量

          .Anomalous Hall Effect measurement, 异常霍尔效应测量

          .Carrier Concentration measurement, 载体浓度测量

          .Hall Mobility measurement, 霍尔迁移率测量

          .Resistivity measurement   电阻率测量

          .Magneto transport measurement, 磁传输测量

          .Four-point resistance measurement, 四点电阻测量

          .Semiconductor amplification systems (CVD, MBE, MOCVD) grown semiconductors impurity level measurements

          半导体放大系统(化学气相沉积,分子束外延,新型气相外延生长技术)生成的半导体杂质水平测量

          Pole Caps: 杆帽

          .Adjustable Pole Caps, 可调适的杆帽

          .25mm face diameter ( Large Diameter 50mm, 75mm & 100mm is optional)

          25mm面径(大直径50mm,75mm&100mm也是可选的)

          .Continuously adjustable 0 – 130mm Pole gap

          可连续调适0 - 130mm间隙

          Electromagne:电磁铁

          •± 2.5 T @ 10mm gap   •±2.5 T @ 10mm间隙

          •± 2.0 T @ 15mm gap   •±2.0 T @ 15mm间隙

          •± 1.5 T @ 25mm gap   •±1.5 T @ 25mm间隙

          •± 1.0 T @ 50mm gap   •±1.0 T @ 50mm间隙

          •High Temperature Option ±1.5T @ 20 mm gap 高温选项±1.5T @ 20 mm间隙

          •Suitable for closed cycle cryostat integration, 4 – 300K and High Temperature option up to 1273K

          适用于4 - 300K和高温选项高达1273K的闭环循环低温恒温器整合

          •Other fields are available at different airgap and pole face. Field uniformity is 0.1% with 25mm pole face;  0.18% with 50mm pole face over 1cm3volumeat 15mm air gap

          其他领域可用于不同的气隙和极面。场均匀度为0.1%,极面为25mm;均匀度为 0.18%,50mm极面覆盖在1cm3体积15mm气隙上

          Chiller:制冷机

          •Closed cycle water cooling. 冷却封闭循环水

          •Interlocks to coils over temperature 互锁线圈温度

          Standard Measurement Ranges: 标准测量范围:

          •Carrier Concentration ~ 103 to 1023 cm-3 (Sample dependent)

          载体浓度:103 至1023cm-3 (取决于样本)

          •Mobility ~ 1 to 107 cm2/Vsec (Sample dependent)

          迁移率:1 至 107 cm2/Vsec (取决于样本)

          •Resistivity (10-6 ?.cm to 106 ?.cm)

          电阻率:(10-6 ?.cm 至 106 ?.cm)

          Available Resistance Options: 可用电阻选项:

          •Mid Range: 100m? to 1M? 中间范围:100mΩ至1MΩ

          •Low to Mid Range: 1µ? to 1 M? 低至中等范围:1μΩ至1MΩ

          •Low to Mid-High Range: 1µ? to 100 M? 低至中高频范围:1μΩ至100MΩ

          •Low to High Range: 1µ? to 100G?  低至高范围:1μΩ至100G?

          •Low to Super High Range: 100m? to 10T? 低至超高范围:100mΩ至10TΩ

          Choice of Current source : 电流源可选:

          •A: ±100fA to ±0.1A programming range  A:±100fA至±0.1A编程范围

          •B: ±10pA to ±1A programming range    B:±10pA至±1A编程范围

          NanoMagnetics Gaussmeter: 纳米磁场高斯计:

          •Magnetic Field Controlled sweeps using integrated Gaussmeter.

          使用集成高斯计的磁场控制扫描。

          •Field calibration with Hall probes 霍尔探头进行现场校准

          •High sensitivity magnetic field measurement 高灵敏度磁场测量

          •Software control of all the parameters  所有参数由软件控制

          Variable Temperature Options: 可变温度选项:

          •Cryogen free-Dry Cryostat. 无制冷剂--干燥低温恒温器

          •Temperature Range 4K to 300K (4K to 350K is optional)

          温度范围4K到300K(4K到350K是可选的)

          •Lowest Temperature < 3K @ 2nd stage zui低温度< 3K @ 2级

          •Single Phase/ 200V, 220V, 230V, 240V  单相/ 200V,220V,230V,240V

          •Temperature controller  温度控制器

          •Re-circulating chiller for cryostat 再循环冷冻机用于低温恒温器

          •Temperature Accuracy ± 0.2K  温度精度±0.2K

          Oven Option: 烤箱选项:

          •Temperature Range: 300K to 1273K 温度范围:300K?1273K

          Optical Access Option: 光学接入选项:

          •Optical access to the sample at room temperature only.

          仅在室温下进行样品的光学接入。

          Sample Holder: 样品持有人:

          Spring loaded design option 弹簧加载设计选项

          •Van der Pauw measurement,  Van der Pauw测量

          •4 or 6 contact Hall bar measurement 4或6接触式Hall bar 测量

          •Easy sample mount with spring pin connections, 带弹簧销连接使样品安装更加方便

          •Standard 10mm x 10mm x 3mm sample size ( larger sizes up to 20mm are available)

          标准10mm x 10mm x 3mm样品尺寸(更大的尺寸可达20mm)

          Sample soldered/bonded design options 样品焊接/粘合设计选项

          •Van der Pauw measurement design     Van der Pauw测量设计

          •4 or 6 contact Hall bar measurement design  4或6接触式Hall bar测量设计

          •Standard 10mm x 10mm x 3mm sample size ( larger sizes up to 20mm are available)

          标准10mm x 10mm x 3mm样品尺寸(更大的尺寸可达20mm)

          •Multiple sample mount 多样本安装

          Controller & Software: 控制器和软件:

          •Keithley Instruments pA/µV sensitivity state of art sourceMeter.

          Keithley Instruments (zui受欧洲芯片公司欢迎的设备商)pA /μV灵敏度状态

          •Labview based fully automated software 基于Labview(一种开发环境)全自动软件

          •Magnet & system control with USB / GPIB / Ethernet interface

          USB / GPIB /以太网接口的磁铁和系统控制

          •Temperature control option for LT-HT measurements, 3K – 1273K

          LT-HT测量的温度控制选项,3K - 1273K

          •Field controlled measurement with the Gaussmeter

          用高斯计进行现场控制测量

          •Easy visualized setups for Van der Pauw and Hall Bar Measurements

          Van der Pauw和Hall Bar Measurements的简单可视化设置

          Specification are subject to change without notice

           

           

          HEMS – Hall Effect Measurement System 霍尔效应测量系统(HEMS)

          地址:北京市海淀区西三旗吉晟别墅22栋17号

          :王春晓  

          腾讯:

          wangcx010

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